6 Patents
- US124354402025Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant
Globalwafers Co., Ltd.
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- US115850102023Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant and Ingot Puller Apparatus That Use a Solid-phase Dopant
Globalwafers Co., Ltd.
0 cites