10 Patents
- US125934812026Silicon Carbide Device with Metallic Interface Layers and Method of Manufacturing
Infineon Technologies AG
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- US125000862025Method of Manufacturing a Metal Silicide Layer Above a Silicon Carbide Substrate, and Semiconductor Device Comprising a Metal Silicide Layer
INFINEON TECHNOLOGIES AG
0 cites - US124630372025Method of Manufacturing Ohmic Contacts on a Silicon Carbide (SIC) Substrate, Method of Manufacturing a Semiconductor Device, and Semiconductor Device
INFINEON TECHNOLOGIES AG
0 cites - US124396742025Semiconductor Power Device and Method of Manufacturing the Same
Infineon Technologies Austria AG
0 cites - 0 cites
- US117640632023Silicon Carbide Device with Compensation Region and Method of Manufacturing
Infineon Technologies AG
0 cites - 0 cites
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- US115521722023Silicon Carbide Device with Compensation Layer and Method of Manufacturing
Infineon Technologies AG
0 cites