38 Patents
- 0 cites
- US125751542026Methods for Pre-deposition Treatment of a Work-function Metal Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US125503742026Semiconductor Device and Formation Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125074702025Semiconductor Device and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124842742025Techniques for Semiconductor Gate and Contact Formation to Reduce Seam Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124713422025NFET with Aluminum-free Work-function Layer and Method Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US124531532025Work-function Layers in the Gates of Pfets
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124396662025Semiconductor Device and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124396482025Transistor Gate Structures and Methods of Forming Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124263212025Transistor Gate Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124179182025Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124143402025Semiconductor Structure Including Nanosheet Channel Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US123763402025Nanosheet Field-effect Transistor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639742025Gate Structure of Semiconductor Device and Method of Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121836382024In-situ Formation of Metal Gate Modulators
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121762512024Semiconductor Device with Profiled Work-function Metal Gate Electrode and Method of Making
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121764012024Seam-filling of Metal Gates with Si-containing Layers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121660742024Gate Structure in Semiconductor Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121426592024Transistor Gate Structures and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121321122024Work Function Control in Gate Structures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120683932024Etching Back and Selective Deposition of Metal Gate
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120517212024Methods of Forming Semiconductor Devices Including Gate Barrier Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120092642024Adjusting Work Function Through Adjusting Deposition Temperature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120093912024Nanosheet Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119489812024Seam-filling of Metal Gates with Si-containing Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119359372024Nanosheet Field-effect Transistor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US118550982023Semiconductor Devices Having Dipole-inducing Elements
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US118429282023In-situ Formation of Metal Gate Modulators
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118241002023Gate Structure of Semiconductor Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118109612023Transistor Gate Structures and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118044092023Semiconductor Device with Profiled Work-function Metal Gate Electrode and Method of Making
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - US116996212023Method for Patterning a Lanthanum Containing Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116463112023Semiconductor Device and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites