7 Patents
- US123007492025Source/drain Features with Improved Strain Properties
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US122374142025Source/drain Features with Improved Strain Properties
TAIWAN SEMICONDCUTOR MANUFACTURING CO., Ltd.
0 cites - US121258482024Semiconductor Device Structure Incorporating Air Gap
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120403812024Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116264002023Semiconductor Device Structure Incorporating Air Gap
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116213432023Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites