51 Patents
- US126107492026Method of Forming a Resistive Memory Device with Ultra-thin Barrier Layer
Taiwan Semiconductor Manufacturing Company Limited
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- US125884292026Resistive Memory Device Including a Silicon Oxide Base Spacer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125076022025RRAM with Post-patterned Treated Memory Films to Provide Improved Endurance Characteristics and Methods for Forming
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123898142025High Electron Affinity Dielectric Layer to Improve Cycling
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US122566522025Metal Landing on Top Electrode of RRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122389392025Memory Device Having Two Memory Stacks Over One Bottom Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US121676112024Feram MFM Structure with Selective Electrode Etch
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US121564092024Memory Layout for Reduced Line Loading
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120824212024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120756342024RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120699712024Switching Layer Scheme to Enhance RRAM Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120571542024Method for Efficiently Waking Up Ferroelectric Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120400192024Methods for Enlarging the Memory Window and Improving Data Retention in Resistive Memory Device
Taiwan Semiconductor Manufacturing Company Limited
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- US119800412024Method to Form Memory Cells Separated by a Void-free Dielectric Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119440212024Metal Landing on Top Electrode of RRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118942672024Method for Fabricating Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118897052024Interconnect Landing Method for RRAM Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118567882023Semiconductor Device and Method of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567972023Resistive Switching Random Access Memory with Asymmetric Source and Drain
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118442862023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118390902023Memory Cells Separated by a Void-free Dielectric Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118007202023Memory Cell Having a Top Electrode Interconnect Arranged Laterally from a Recess
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117857772023Feram MFM Structure with Selective Electrode Etch
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117514052023Integrated Circuit and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117514852023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117372902023RRAM Memory Cell with Multiple Filaments
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232922023RRAM Cell Structure with Laterally Offset BEVA/TEVA
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232942023Memory Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117069302023Semiconductor Device and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116965212023High Electron Affinity Dielectric Layer to Improve Cycling
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116824562023Methods for Enlarging the Memory Window and Improving Data Retention in Restistive Memory Device
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US116839992023Switching Layer Scheme to Enhance RRAM Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116784942023Memory Layout for Reduced Line Loading
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116785922023Step Height Mitigation in Resistive Random Access Memory Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US116372392023High Yield RRAM Cell with Optimized Film Scheme
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116318102023Bottom Electrode Structure in Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116110382023Method for Forming RRAM with a Barrier Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites