21 Patents
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- US125504022026Nanostructure Field-effect Transistor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125433432026Semiconductor Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US124293752025Spectrometer System with Volume Holographic Light Guide Element
NATIONAL CENTRAL UNIVERSITY
0 cites - US124263352025Reducing K Values of Dielectric Films Through Anneal
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639792025Nanosheet Field-effect Transistor Device Including Multi-layer Spacer Film and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123242082025Method for Manufacturing Semiconductor Device Including Annealing Treatment of Inner Spacer Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122496392025Semiconductor Device Including Multiple Inner Spacers with Different Etch Rates and Method of Making
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122060122025Reducing K Values of Dielectric Films Through Anneal
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120807752024Semiconductor Device and Forming Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120403822024Method of Forming a Nano-fet Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120094072024Nanosheet Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US118546322023Semiconductor Memory Structure and Fabrication Method Thereof
UNITED MICROELECTRONICS Corp.
0 cites - US118551822023Low-k Gate Spacer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US116827112023Semiconductor Device Having Multi-layered Gate Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116644412023Nanosheet Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites