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Inventors
Wen-ching Hsu
Hsinchu
TW
8 patents
9 Patents
US12163247
2024
Method for Producing Silicon Ingot Single Crystal
Globalwafers Co., Ltd.
0 cites
US12119382
2024
Buffer Layer Structure to Improve Gan Semiconductors
Globalwafers Co., Ltd.
0 cites
US12037696
2024
Method for Producing Si Ingot Single Crystal, Si Ingot Single Crystal, and Apparatus Thereof
Globalwafers Co., Ltd.
0 cites
US12037697
2024
Apparatus for Producing Si Ingot Single Crystal
Globalwafers Co., Ltd.
0 cites
US11923422
2024
Semiconductor Device
Globalwafers Co., Ltd.
0 cites
US11859965
2024
Material Analysis Method
Globalwafers Co., Ltd.
0 cites
US11708642
2023
Mono-crystalline Silicon Growth Apparatus
Globalwafers Co., Ltd.
0 cites
US11705489
2023
Buffer Layer Structure to Improve Gan Semiconductors
Globalwafers Co., Ltd.
0 cites
US11688628
2023
Method of Manufacturing Epitaxy Substrate
Globalwafers Co., Ltd.
0 cites