Weizong Xu

8 Patents

• US125687102026

  Silicon Carbide Detector and Fabrication Method Thereof

  Hefei National Laboratory

  0 cites
• US124553912025

  Reset-type Charge-sensitive Amplifying Circuit, and Method for Amplifying and Resetting Data Signal

  Hefei National Laboratory

  0 cites
• US123928162025

  Pulse Laser Irradiation Wide Bandgap Power Device

  NANJING UNIVERSITY

  0 cites
• US123007462025

  Gan HEMT Transistor with Impact Energy Release Capability for Use in Aerospace Irradiation Environment and Preparation Method Thereof

  NANJING UNIVERSITY

  0 cites
• US122951542025

  Wide Bandgap Semiconductor Structure for Irradiation Characteristic Test and Preparation Method Thereof

  NANJING UNIVERSITY

  0 cites
• US122873602025

  Gan HEMT Device for Irradiation Damage Detection and Detection and Manufacturing Method Therefor

  NANJING UNIVERSITY

  0 cites
• US121469082024

  In-situ Testing System for Semiconductor Device in Aerospace Irradiation Environment

  NANJING UNIVERSITY

  0 cites
• US120808212024

  Silicon Carbide-based Lateral PN Junction Extreme Ultraviolet Detector Based on Selective-area Ion Implantation, and Preparation Method Thereof

  NANJING UNIVERSITY

  0 cites