3 Patents
- US122740692025Semiconductor Device Having Ferroelectric Layer in Recess and Method for Manufacturing the Same
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US121838072024Semiconductor Device and Method for Manufacturing the Same
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US120966232024Vertical Semiconductor Device, Manufacturing Method Therefor, Integrated Circuit and Electronic Device
Institute Of Microelectronics, Chinese Academy Of Sciences China
0 cites