16 Patents
- US124083632025Semiconductor Device with Phosphorus-doped Epitaxial Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US121549022024Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121366732024Semiconductor Device with Self-aligned Wavy Contact Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121258792024Epitaxial Source/drain Structure and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120807592024Transistor Source/drain Regions and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US118627122024Methods of Semiconductor Device Fabrication Including Growing Epitaxial Features Using Different Carrier Gases
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118241212023Semiconductor Device with Self-aligned Wavy Contact Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117989412023Semiconductor Device Having an Upper Epitaxial Layer Contacting Two Lower Epitaxial Layers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US117914022023Semiconductor Device Having Strained Channels
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117842222023Epitaxial Source/drain Structure and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116161422023Semiconductor Device with Self-aligned Wavy Contact Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites