Patents/Inventors

Wei-yang Lee

Taipei CityTW96 patents

112 Patents

US125882832026
Semiconductor Structure and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US125816912026
Methods of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US125686482026
Backside Source/drain Contacts and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US125433612026
Gate-all-around Transistor Having Inner Space Lined by a Semiconductor Liner and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US125385322026
Method of Forming a Gap Under a Source/drain Feature of a Multi-gate Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US125325322026
Epitaxial Features in Semiconductor Devices and Method of Manufacturing
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125074462025
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US125016012025
Method for Forming Different Types of Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124713062025
Semiconductor Device Active Region Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124647692025
Semiconductor Device with Epitaxial Bridge Feature and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124577702025
Source and Drain Engineering Process for Multigate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124531272025
Methods of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124531612025
Semiconductor Device with Air-spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124396512025
Integrated Circuit Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124329902025
Epitaxial Source/drain Feature with Enlarged Lower Section Interfacing with Backside Via
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124330082025
Finfet Structure with Airgap and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124262972025
Method and Structure for Air Gap Inner Spacer in Gate-all-around Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124263462025
Semiconductor Device and Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124083772025
Semiconductor Device Structure with Backside Contact
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124023542025
Epitaxial Features in Semiconductor Devices and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124023642025
Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US123962202025
Isolation Structures in Multi-gate Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123826602025
Structure and Formation Method of Semiconductor Device with Embedded Epitaxial Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123826922025
Dielectric Inner Spacers in Multi-gate Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites
US123827032025
Spacer Features for Nanosheet-based Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123693342025
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123693832025
Semiconductor Structure with Gate-all-around Devices and Stacked Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123639502025
Nano-fet Semiconductor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123639882025
Inner Spacer Features for Multi-gate Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123639892025
Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123566622025
Asymmetric Source/drain for Backside Source Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US123493932025
Semiconductor Device Transistor Having Multiple Channels with Different Widths and Materials
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US123242012025
Integrated Circuit Device with Source/drain Barrier
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123175522025
Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123175562025
Semiconductor Devices and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123082872025
Integrated Circuit Structure with Backside Dielectric Layer Having Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123100572025
Semiconductor Devices Including Backside Vias and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123026152025
Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122781452025
Semiconductor Devices with a Source/drain Barrier Layer and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122727292025
Asymmetric Source/drain for Backside Source Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122665762025
Semiconductor Device and Methods of Manufacture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122666552025
Transistors with Recessed Silicon Cap and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122680232025
Devices with Improved Operational Current and Reduced Leakage Current
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122372302025
Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122372322025
Methods for Forming Source/drain Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122373902025
Low Resistance Contact Feature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122373992025
Nano-fet Transistor with Alternating Nanostructures and Method of Forming Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122374032025
Structure of a Fin Field Effect Transistor (finfet) Comprising Epitaxial Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122181382025
Air Gap Formation Between Gate Spacer and Epitaxy Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122117492025
Cut EPI Process and Structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121913692025
Source and Drain Engineering Process for Multigate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121913702025
Semiconductor Device with Tunable Channel Layer Usage and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121764002024
Backside Contact with Air Spacer
TAIWAN SEMINCODCUTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121549472024
Methods of Forming Epitaxial Source/drain Features in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121426472024
Self-aligning Backside Contact Process and Devices Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121366582024
Integrated Circuit with Doped Low-k Sidewall Spacers for Gate Stacks
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121258892024
Source/drain Contact with Low-k Contact Etch Stop Layer and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121071652024
Semiconductor Device Structure with Cap Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120878372024
Semiconductor Device with Backside Contact and Methods of Forming Such
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120807752024
Semiconductor Device and Forming Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120808002024
Semiconductor Devices with Modified Source/drain Feature and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120682042024
Methods of Forming Epitaxial Structures in Fin-like Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120683712024
Method for Finfet LDD Doping
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120683892024
Semiconductor Device Including Gas Spacers and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120626922024
Tapered Dielectric Layer for Preventing Electrical Shorting Between Gate and Back Side Via
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US120516282024
Semiconductor Device with Funnel Shape Spacer and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120517322024
Semiconductor Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120404072024
Semiconductor Devices Including Backside Vias and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120340482024
Source/drain Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120276262024
Semiconductor Device Active Region Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120211332024
Inner Spacer Liner
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120150602024
Structure and Formation Method of Semiconductor Device with Backside Contact
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120028452024
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119964672024
Method for Epitaxial Growth and Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119844892024
Air Spacer for a Gate Structure of a Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119731222024
Nano-fet Semiconductor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119490022024
Semiconductor Device and Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119357812024
Integrated Circuit Structure with Backside Dielectric Layer Having Air Gap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US119234092024
Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119161102024
Semiconductor Device Having Nanosheet Transistor and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119178032024
Method for Forming Different Types of Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119087482024
Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119012362024
Semiconductor Structure with Gate-all-around Devices and Stacked Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119014102024
Semiconductor Devices and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118944212024
Integrated Circuit Device with Source/drain Barrier
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.V
0 cites
US118546882023
Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118550972023
Air Gap Formation Between Gate Spacer and Epitaxy Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118551672023
Structure and Formation Method of Semiconductor Device with Nanosheet Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118552202023
Method and Structure for Air Gap Inner Spacer in Gate-all-around Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118552252023
Semiconductor Device with Epitaxial Bridge Feature and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118309222023
Semiconductor Device with Air-spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118108252023
Methods of Forming Epitaxial Structures in Fin-like Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117989962023
Backside Contact with Air Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117990022023
Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117698202023
Methods of Manufacturing a Finfet by Forming a Hollow Area in the Epitaxial Source/drain Region
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US117497192023
Source/drain Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117356412023
Finfet Structure with Airgap and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117356602023
Method of Forming Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117282232023
Semiconductor Device and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117283442023
Hybrid SRAM Design with Nano-structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117107922023
Semiconductor Structure with Improved Source Drain Epitaxy
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116997372023
Integrated Circuit with Doped Low-k Side Wall Spacers for Gate Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116949332023
Methods of Forming Metal Gate Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116887932023
Integrated Circuit Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116887942023
Method for Epitaxial Growth and Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116770282023
PMOS Finfet
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116317362023
Epitaxial Source/drain Feature with Enlarged Lower Section Interfacing with Backside Via
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116317462023
Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116265052023
Dielectric Inner Spacers in Multi-gate Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116265082023
Structure of a Fin Field Effect Transistor (finfet)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115750472023
Semiconductor Device Active Region Profile and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115693862023
Method for Forming Semiconductor Device Structure with Cap Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites