16 Patents
- US125325182026Transistor Source/drain Regions and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124379902025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124190842025Methods of Forming Transistor Source/drain Regions Comprising Carbon Liner Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123962422025Nano-structure Transistors with Air Inner Spacers and Methods Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362372025Source/drain Regions of Semiconductor Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US123026152025Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122552552025Method of Manufacturing a Finfet with Merged Epitaxial Source/drain Regions
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122439312025Source/drain Epitaxial Layers for Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US121321182024Semiconductor Device Having a Multilayer Source/drain Region and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120740712024Source/drain Structures and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119234092024Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116770132023Source/drain Epitaxial Layers for Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US116005342023Source/drain Structures and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites