15 Patents
- US125016602025Field Effect Transistor with Merged Epitaxy Backside Cut and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124904762025Method and Device for Boosting Performance of Finfets via Strained Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123007202025Multi-gate Device with Air Gap Spacer and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122117902025Conductive Rail Structure for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121991702025Method of Manufacturing a Multi-gate Device Having a Semiconductor Seed Layer Embedded in an Isolation Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121488302024Method and Device for Boosting Performance of Finfets via Strained Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120949382024Semiconductor Device with Low Resistances and Methods of Forming Such
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120092932024Barrier-free Interconnect Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120094082024Multi-gate Devices Having a Semiconductor Layer Between an Inner Spacer and an Epitaxial Feature
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119294092024Semiconductor Device with Improved Source and Drain Contact Area and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118551432023Semiconductor Structures and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118375382023Conductive Rail Structure for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US117642622023Multi-gate Device with Air Gap Spacer and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117569592023Structure and Method of Integrated Circuit Having Decouple Capacitance
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116644512023Method and Device for Boosting Performance of Finfets via Strained Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites