Wei Hao Lu

11 Patents

• US125686482026

  Backside Source/drain Contacts and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US124577702025

  Source and Drain Engineering Process for Multigate Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US124023442025

  FETS and Methods of Forming FETS

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US123896712025

  Source/drain Regions of Semiconductor Devices and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US123639892025

  Semiconductor Device with Leakage Current Suppression and Method for Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US123494262025

  Source/drain Device and Method of Forming Thereof

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US122372302025

  Semiconductor Device with Leakage Current Suppression and Method for Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US121913692025

  Source and Drain Engineering Process for Multigate Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US119905112024

  Source/drain Device and Method of Forming Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US118044872023

  Source/drain Regions of Semiconductor Devices and Methods of Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US116007152023

  Fets and Methods of Forming Fets

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. Ltd.

  0 cites