Wei-chuan Chen

6 Patents

• US125687682026

  Methods for Fabricating Magnetoresistive Random Access Memory with via Under MJT

  HEFECHIP CORPORATION LIMITED

  0 cites
• US125575542026

  Methods for Fabricating MRAM with Void Free Interlayer Dielectric

  HEFECHIP CORPORATION LIMITED

  0 cites
• US121086842024

  Magnetic Tunneling Junction Element with a Composite Capping Layer and Magnetoresistive Random Access Memory Device Using the Same

  HEFECHIP CORPORATION LIMITED

  0 cites
• US120504922024

  Electronic Device

  ASUSTEK COMPUTER Inc.

  0 cites
• US117477422023

  Apparatus and Method for Removing Photoresist Layer from Alignment Mark

  VISERA TECHNOLOGIES COMPANY LIMITED

  0 cites
• US116251112023

  Control Method for Electronic Device

  ASUSTEK COMPUTER Inc.

  0 cites