29 Patents
- US125503332026Semiconductor Switching Devices Having Ferroelectric Layers Therein and Methods of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites - US124514212025Semiconductor Device with Double Etch Stop Layer and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US122625582025Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
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- US121991632025Semiconductor Device and Method of Fabricating the Same Where Semiconductor Device Includes High-k Dielectric Layer That Does Not Extend Between Inhibition Layer and Side of Gate Electrode
Samsung Electronics Co., Ltd.
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- US120210272024Integrated Circuit Device Having Parallel Conductive Lines with Bulging End Portion(s) and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
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- US117788352023Semiconductor Switching Devices Having Ferroelectric Layers Therein and Methods of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US115576562023Semiconductor Device Having a Capping Pattern on a Gate Electrode
SAMSUNG ELECTRONICS CO., Ltd.
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