Patents/Inventors

Wan-yu Kai

New Taipei CityTW9 patents

11 Patents

US126105932026
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US124577752025
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US124462732025
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US123693642025
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US123362982025
Electrostatic Discharge Protection Structure, Semiconductor Power Device and Manufacturing Method Thereof
Diodes Incorporated
0 cites
US122680212025
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US122565622025
Manufacturing Method for a Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US122243112025
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US121703112024
Manufacturing Method for a Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US121549412024
Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites
US121549422024
Manufacturing Method for a Power MOSFET with Gate-source ESD Diode Structure
Diodes Incorporated
0 cites