Voon Cheng Ngwan

3 Patents

• US124396212025

  Method of Making a Charge Coupled Field Effect Rectifier Diode

  Stmicroelectronics (Tours) SAS

  0 cites
• US122243422025

  Gate Contact Structure for a Trench Power MOSFET with a Split Gate Configuration

  Stmicroelectronics Pte Ltd

  0 cites
• US118483782023

  Split-gate Trench Power MOSFET with Self-aligned Poly-to-poly Isolation

  Stmicroelectronics Pte Ltd

  0 cites