4 Patents
- US125637792026Gate-all-around Integrated Structures Having Gate Height Reduction and Dielectric Capping Material with Shoulder Portions Inside Gate Stack
Intel Corporation
0 cites - US124143272025Lateral Confinement of Source Drain Epitaxial Growth in Non-planar Transistor for Cell Height Scaling
Intel Corporation
0 cites - US115946372023Gate-all-around Integrated Circuit Structures Having Fin Stack Isolation
Intel Corporation
0 cites - 0 cites