16 Patents
- US125506232026Nitride Diffusion Barrier Structure for Spintronic Applications
Headway Technologies, Inc.
0 cites - US125018362025Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123102452025Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
Headway Technologies, Inc.
0 cites - US122455162025Self-aligned Encapsulation Hard Mask to Separate Physically Under-etched MTJ Cells to Reduce Conductive Re-deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122075662025MTJ Device Performance by Adding Stress Modulation Layer to MTJ Device Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121856412024Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120825092024Dual Magnetic Tunnel Junction (DMTJ) Stack Design
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120271912024Free Layer Structure in Magnetic Random Access Memory (MRAM) for Mo or W Perpendicular Magnetic Anisotropy (PMA) Enhancing Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119569712024Cooling for PMA (perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (spin-torque Transfer-magnetic Random Access Memory) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119033242024Post Treatment to Reduce Shunting Devices for Physical Etching Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118496462023Nitride Capping Layer for Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118189612023Self-aligned Encapsulation Hard Mask to Separate Physically Under-etched MTJ Cells to Reduce Conductive Re-deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117858642023MTJ Device Performance by Adding Stress Modulation Layer to Mtj Device Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US116965112023Low Resistance Mgo Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116318022023Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
Headway Technologies, Inc.
0 cites