6 Patents
- US124976942025Method of Forming Low-resistivity Ru ALD Through a Bi-layer Process and Related Structures
Samsung Electronics Co., Ltd.
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- US121547872024Methods of Performing Selective Low Resistivity Ru Atomic Layer Deposition and Interconnect Formed Using the Same
The Regents Of The University Of California
0 cites - US120274882024Methods of Forming Stacked Integrated Circuits Using Selective Thermal Atomic Layer Deposition on Conductive Contacts and Structures Formed Using the Same
Georgia Tech Research Corporation
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