Patents/Inventors

Vibhor Jain

Essex Junction, VTUS83 patents

72 Patents

US126017102026
Ion-sensitive Field-effect Transistors with Local-field Bias
Globalfoundries U.S. Inc.
0 cites
US126047352026
Device with Airgap Structure
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125882822026
Integrated Structure with Trap Rich Regions and Low Resistivity Regions
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125298462026
Waveguide Cores Surrounded by an Airgap
Globalfoundries U.S. Inc.
0 cites
US124956232025
Lateral Phototransistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US124811962025
Optical Phase Shifter with One or More Integrated Thermoelectric Devices
Globalfoundries U.S. Inc.
0 cites
US124712942025
Array Arrangements of Vertical Bipolar Junction Transistors
Globalfoundries U.S. Inc.
0 cites
US124647452025
Bipolar Junction Transistor Arrays
Globalfoundries U.S. Inc.
0 cites
US123962212025
Junction Field-effect Transistors
Globalfoundries Singapore Pte. Ltd.
0 cites
US123880152025
E-fuse with Metal Fill
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123896222025
High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundaries Singapore Pte. Ltd.
0 cites
US123493752025
Lateral Bipolar Transistors with Gate Structure Aligned to Extrinsic Base
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123362062025
Heterojunction Bipolar Transistors with a Cut Stress Liner
Globalfoundries U.S. Inc.
0 cites
US123362432025
Lateral Bipolar Transistor with Gated Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123363022025
Vertical Device Triggered Silicon Control Rectifier
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123277762025
Heat Sink for Face Bonded Semiconductor Device
Globalfoundries Singapore Pte. Ltd.
0 cites
US123242272025
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123064422025
Structure Including Grating Coupler with Optofluidic Grating Channels
Globalfoundries U.S. Inc.
0 cites
US122782692025
Bipolar Transistor with Stepped Emitter
GLOBALFOUNDRIES U.S. Inc.
0 cites
US122439352025
High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites
US122374072025
Heterojunction Bipolar Transistor with Amorphous Semiconductor Regions
Globalfoundries U.S. Inc.
0 cites
US122119292025
Heterojunction Bipolar Transistors with Terminals Having a Non-planar Arrangement
Globalfoundries U.S. Inc.
0 cites
US122041442025
Bragg Reflector for Photonic Chip Security Structure
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121764272024
Bipolar Transistor and Gate Structure on Semiconductor Fin and Methods to Form Same
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121703132024
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121599102024
Isolation Regions for Charge Collection and Removal
Globalfoundries U.S. Inc.
0 cites
US121599262024
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121426732024
Transistor with Wrap-around Extrinsic Base
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US121071242024
Bipolar Transistors
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US120466332024
Airgap Structures in Auto-doped Region Under One or More Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US120275532024
Photodetector with Buried Airgap Reflectors
Globalfoundries U.S. Inc.
0 cites
US120094122024
Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119905352024
Lateral Heterojunction Bipolar Transistor with Emitter And/or Collector Regrown from Substrate and Method
Globalfoundries U.S. Inc.
0 cites
US119490042024
Lateral Bipolar Transistors with Gate Structure Aligned to Extrinsic Base
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119420822024
Facilitating Communications with Automated Assistants in Multiple Languages
GOOGLE LLC
0 cites
US119425342024
Bipolar Transistor with Thermal Conductor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119359232024
Lateral Bipolar Transistor with Gated Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119359272024
Bipolar Transistor with Collector Contact
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119359282024
Bipolar Transistor with Self-aligned Asymmetric Spacer
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119234462024
High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites
US119156922024
Facilitating End-to-end Communications with Automated Assistants in Multiple Languages
GOOGLE LLC
0 cites
US119013042024
Integrated Circuit Structure with Fluorescent Material, and Related Methods
Globalfoundries U.S. Inc.
0 cites
US118815232024
Heterojunction Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118757882024
Facilitating End-to-end Communications with Automated Assistants in Multiple Languages
GOOGLE LLC
0 cites
US118761232024
Heterojunction Bipolar Transistors with Stress Material for Improved Mobility
Globalfoundries U.S. Inc.
0 cites
US118695112024
Using Speech Mannerisms to Validate an Integrity of a Conference Participant
CISCO TECHNOLOGY, Inc.
0 cites
US118699582024
Heterojunction Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118627172024
Lateral Bipolar Transistor Structure with Superlattice Layer and Method to Form Same
Globalfoundries U.S. Inc.
0 cites
US118551952023
Transistor with Wrap-around Extrinsic Base
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US118551962023
Transistor with Wrap-around Extrinsic Base
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US118551972023
Vertical Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118481922023
Heterojunction Bipolar Transistor with Emitter Base Junction Oxide Interface
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118157172023
Photonic Chip Security Structure
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118109692023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118045412023
Bipolar Transistor Structure with Emitter/collector Contact to Doped Semiconductor Well and Related Methods
Globalfoundries U.S. Inc.
0 cites
US118045432023
Diode Structures with One or More Raised Terminals
Globalfoundries U.S. Inc.
0 cites
US117990212023
Lateral Bipolar Transistor Structure with Marker Layer for Emitter and Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117913342023
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117770192023
Lateral Heterojunction Bipolar Transistor with Improved Breakdown Voltage and Method
Globalfoundries U.S. Inc.
0 cites
US117495992023
Dual Thickness Fuse Structures
GLOBALFOUNDRIES Inc.
0 cites
US117497472023
Bipolar Transistor Structure with Collector on Polycrystalline Isolation Layer and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US117217192023
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117107712023
Non-self-aligned Lateral Bipolar Junction Transistors
Globalfoundries U.S. Inc.
0 cites
US116950642023
Bipolar Junction Transistors with a Wraparound Base Layer
Globalfoundries U.S. Inc.
0 cites
US116463482023
Double Mesa Heterojunction Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116398952023
Device Including Optofluidic Sensor with Integrated Photodiode
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116370682023
Thermally and Electrically Conductive Interconnects
Globalfoundries U.S. Inc.
0 cites
US116371812023
Lateral Bipolar Transistors with Polysilicon Terminals
GLOBALFOUNDRIES U.S. Inc.
0 cites
US115814502023
Photodiode And/or Pin Diode Structures with One or More Vertical Surfaces
GLOBALFOUNDRIES U.S. Inc.
0 cites
US115748672023
Non-planar Silicided Semiconductor Electrical Fuse
Globalfoundries U.S. Inc.
0 cites
US115694052023
Photodetectors with a Lateral Composition Gradient
Globalfoundries U.S. Inc.
0 cites
US115499132023
Shear-mode Chemical/physical Sensor for Liquid Environment Sensing and Method for Producing the Same
VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. Ltd.
0 cites