15 Patents
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- US124262782025Resistive Memory Elements Accessed by Bipolar Junction Transistors
Globalfoundries U.S. Inc.
0 cites - US123863792025Non-volatile Current Mirror Circuit with Programmable Transistor
Globalfoundries U.S. Inc.
0 cites - US122115852025Partitioned Memory Architecture with Single Resistor Memory Elements for In-memory Serial Processing
Globalfoundries U.S. Inc.
0 cites - US122056332025Non-volatile Memory Device with Reference Voltage Circuit Including Column(s) of Reference Bit Cells Adjacent Columns of Memory Bit Cells Within a Memory Cell Array
Globalfoundries U.S. Inc.
0 cites - US121909302025Threshold Voltage-programmable Field Effect Transistor-based Memory Cells and Look-up Table Implemented Using the Memory Cells
Globalfoundries U.S. Inc.
0 cites - US121760232024Non-volatile Static Random Access Memory Bit Cells with Ferroelectric Field-effect Transistors
Globalfoundries U.S. Inc.
0 cites - US121596852024Partitioned Memory Architecture and Method for Repeatedly Using the Architecture for Multiple In-memory Processing Layers
Globalfoundries U.S. Inc.
0 cites - US121364682024Calibration Methods and Structures for Partitioned Memory Architecture with Single Resistor or Dual Resistor Memory Elements
Globalfoundries U.S. Inc.
0 cites - US121255302024Partitioned Memory Architecture with Single Resistor or Dual Resistor Memory Elements for In-memory Pipeline Processing
Globalfoundries U.S. Inc.
0 cites - US121068042024Partitioned Memory Architecture with Dual Resistor Memory Elements for In-memory Serial Processing
Globalfoundries U.S. Inc.
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- US119901712024Threshold Voltage-programmable Field Effect Transistor-based Memory Cells and Look-up Table Implemented Using the Memory Cells
Globalfoundries U.S. Inc.
0 cites - US118556422023Programmable Delay Circuit Including Threshold-voltage Programmable Field Effect Transistor
Globalfoundries U.S. Inc.
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