Veeraraghavan S. Basker

32 Patents

• US125987592026

  High-density Metal-insulator-metal Capacitor Integration Wth Nanosheet Stack Technology

  International Business Machines Corporation

  0 cites
• US125638172026

  Integrating Gate-cuts and Single Diffusion Break Isolation Post-rmg Using Low-temperature Protective Liners

  International Business Machines Corporation

  0 cites
• US124827422025

  Enhanced Linerless Vias

  International Business Machines Corporation

  0 cites
• US124777792025

  Gate-all-around Field-effect-transistor with Wrap-around-channel Inner Spacer

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US124648132025

  Semiconductor Device Having Hybrid Middle of Line Contacts

  International Business Machines Corporation

  0 cites
• US124380342025

  Narrowing Single Diffusion Break

  International Business Machines Corporation

  0 cites
• US124329602025

  Wraparound Contact with Reduced Distance to Channel

  International Business Machines Corporation

  0 cites
• US124179442025

  Formation of Trench Silicide Source or Drain Contacts Without Gate Damage

  International Business Machines Corporation

  0 cites
• US124143282025

  Co-integrating Gate-all-around Nanosheet Transistors and Comb-nanosheet Transistors

  International Business Machines Corporation

  0 cites
• US123763692025

  Finfet Devices

  Adeia Semiconductor Solutions LLC

  0 cites
• US123241842025

  Replacement Gate Cross-couple for Static Random-access Memory Scaling

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US123175552025

  Gate-all-around Nanosheet Field Effect Transistor Integrated with Fin Field Effect Transistor

  International Business Machines Corporation

  0 cites
• US123100542025

  Late Replacement Bottom Isolation for Nanosheet Devices

  International Business Machines Corporation

  0 cites
• US122552042025

  Vertical FET Replacement Gate Formation with Variable Fin Pitch

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US122243122025

  Field Effect Transistors with Bottom Dielectric Isolation

  International Business Machines Corporation

  0 cites
• US121193412024

  Electrostatic Discharge Diode Having Dielectric Isolation Layer

  International Business Machines Corporation

  0 cites
• US121193932024

  Punch Through Stopper in Bulk Finfet Device

  Adeia Semiconductor Solutions LLC

  0 cites
• US121007442024

  Wrap Around Contact Process Margin Improvement with Early Contact Cut

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US121007462024

  Gate-all-around Field Effect Transistor with Bottom Dielectric Isolation

  International Business Machines Corporation

  0 cites
• US120876912024

  Semiconductor Structures with Backside Gate Contacts

  International Business Machines Corporation

  0 cites
• US120094352024

  Integrated Nanosheet Field Effect Transistors and Floating Gate Memory Cells

  International Business Machines Corporation

  0 cites
• US119905082024

  Dual Step Etch-back Inner Spacer Formation

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US119555262024

  Thick Gate Oxide Device Option for Nanosheet Device

  International Business Machines Corporation

  0 cites
• US118943612024

  Co-integrated Logic, Electrostatic Discharge, and Well Contact Devices on a Substrate

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US118944362024

  Gate-all-around Monolithic Stacked Field Effect Transistors Having Multiple Threshold Voltages

  International Business Machines Corporation

  0 cites
• US117570122023

  Source and Drain Contact Cut Last Process to Enable Wrap-around-contact

  International Business Machines Corporation

  0 cites
• US117107682023

  Hybrid Diffusion Break with EUV Gate Patterning

  International Business Machines Corporation

  0 cites
• US116950572023

  Protective Bilayer Inner Spacer for Nanosheet Devices

  International Business Machines Corporation

  0 cites
• US116887412023

  Gate-all-around Devices with Isolated and Non-isolated Epitaxy Regions for Strain Engineering

  International Business Machines Corporation

  0 cites
• US116463062023

  Co-integration of Gate-all-around FET, FINFET and Passive Devices on Bulk Substrate

  International Business Machines Corporation

  0 cites
• US116213322023

  Wraparound Contact to a Buried Power Rail

  International Business Machines Corporation

  0 cites
• US116159882023

  Finfet Devices

  Tessera, LLC

  0 cites