Vassil N. Antonov

4 Patents

• US124329282025

  Vertical Transistor, Integrated Circuitry, Method of Forming a Vertical Transistor, and Method of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US121913542025

  Vertical Transistors Having at Least 50% Grain Boundaries Offset Between Top and Bottom Source/drain Regions and the Channel Region That Is Vertically Therebetween

  Micron Technology, Inc.

  0 cites
• US118715822024

  Vertical Transistor, Integrated Circuitry, Method of Forming a Vertical Transistor, and Method of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US118256622023

  Ferroelectric Capacitor, a Ferroelectric Memory Cell, an Array of Ferroelectric Memory Cells, and a Method of Forming a Ferroelectric Capacitor

  Micron Technology, Inc.

  0 cites