Patents/Inventors

Van H. Le

Beaverton, ORUS98 patents

82 Patents

US126220422026
Multi-layered or Graded Gate Dielectric in Thin Film Transistor (TFT) Structures
INTEL CORPORATION
0 cites
US126220182026
Multi-layered or Graded Semiconductor Region in Thin Film Transistor (TFT) Structures
INTEL CORPORATION
0 cites
US126219792026
Multi-tier Memory Structure with Graded Characteristics
INTEL CORPORATION
0 cites
US126160122026
Stacked Random Access Memory Devices with Multilayer Continuous Vias
Intel Corporation
0 cites
US126105822026
Multi-layered Source and Drain Contacts for a Thin Film Transistor (TFT) Structure
Intel Corporation
0 cites
US126044792026
Two Transistor Capacitorless Memory Cell with Stacked Thin-film Transistors
Intel Corporation
0 cites
US125988102026
Co-doping of Thin Film Transistors
INTEL CORPORATION
0 cites
US125990322026
Bilayer Memory Stacking with Lines Shared Between Bottom and Top Memory Layers
Intel Corporation
0 cites
US125882412026
Asymmetric Source and Drain Contacts for a Thin Film Transistor (TFT) Structure
INTEL CORPORATION
0 cites
US125818572026
Integrated Thermoelectric Device to Mitigate Integrated Circuit Hot Spots
Intel Corporation
0 cites
US125751652026
Transistor Devices with High-k Perovskite Gate Dielectrics
Intel Corporation
0 cites
US125640352026
Airgaps Used in Backend Memory Structures
Intel Corporation
0 cites
US125433492026
Transistors with Ferroelectric Gates
Intel Corporation
0 cites
US125384702026
Structures and Methods for Memory Cells
Intel Corporation
0 cites
US125325262026
Metallic Sealants in Transistor Arrangements
Intel Corporation
0 cites
US124904602025
Dielectric Sidewall Features for Tuning Thin Film Transistor (TFT) Parasitics
Intel Corporation
0 cites
US124761832025
Punch-through Interconnect Feature to Couple Upper Electrodes of Capacitors of Multi-level Memory Arrays
Intel Corporation
0 cites
US124329482025
Compositional Engineering of Schottky Diode
Intel Corporation
0 cites
US124262472025
Capacitor Connections in Dielectric Layers
Intel Corporation
0 cites
US124069562025
Bilayer Memory Stacking with Computer Logic Circuits Shared Between Bottom and Top Memory Layers
Intel Corporation
0 cites
US124024012025
Integrated Circuit Devices with Finfets Over Gate-all-around Transistors
Intel Corporation
0 cites
US124009972025
Hybrid Manufacturing with Modified Via-last Process
Intel Corporation
0 cites
US123961552025
Backend Memory with Air Gaps in Upper Metal Layers
Intel Corporation
0 cites
US123811932025
Integrated Circuit Assemblies
Intel Corporation
0 cites
US123763622025
Field Effect Transistors with a Gated Oxide Semiconductor Source/drain Spacer
Intel Corporation
0 cites
US123746662025
Integrated Circuit Assemblies with Stacked Compute Logic and Memory Dies
Intel Corporation
0 cites
US123289462025
ESD Protection Decoupled from Diffusion
Intel Corporation
0 cites
US123100322025
Stacked Backend Memory with Resistive Switching Devices
Intel Corporation
0 cites
US122455232025
Quantum Dot Devices with Fins
Intel Corporation
0 cites
US122389132025
Two Transistor Memory Cell Using Stacked Thin-film Transistors
Intel Corporation
0 cites
US121913952025
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US121838312024
Self-aligned Contacts for Thin Film Transistors
Intel Corporation
0 cites
USRE0502222024
Non-planar Gate All-around Device and Method of Fabrication Thereof
Sony Group Corporation
0 cites
US121487342024
Transistors, Memory Cells, and Arrangements Thereof
Intel Corporation
0 cites
US121502972024
Thin Film Transistors Having a Backside Channel Contact for High Density Memory
Intel Corporation
0 cites
US121426892024
Transistor Including Wrap Around Source and Drain Contacts
Intel Corporation
0 cites
US121259172024
Thin Film Transistors Having Double Gates
Intel Corporation
0 cites
US121194092024
Multi-layer Crystalline Back Gated Thin Film Transistor
Intel Corporation
0 cites
US120807812024
Fabrication of Thin Film Fin Transistor Structure
Intel Corporation
0 cites
US120588472024
Monolithic Memory Stack
Intel Corporation
0 cites
US120574022024
Direct Bonding in Microelectronic Assemblies
Intel Corporation
0 cites
US120094332024
Multi-dielectric Gate Stack for Crystalline Thin Film Transistors
Intel Corporation
0 cites
US119978472024
Thin Film Transistors with Spacer Controlled Gate Length
Intel Corporation
0 cites
US119918732024
Capacitor Separations in Dielectric Layers
Intel Corporation
0 cites
US119788042024
Recessed Thin-channel Thin-film Transistor
Intel Corporation
0 cites
US119504072024
Memory Architecture with Shared Bitline at Back-end-of-line
Intel Corporation
0 cites
US119233712024
Voltage Regulator Circuit Including One or More Thin-film Transistors
Intel Corporation
0 cites
US118944652024
Deep Gate-all-around Semiconductor Device Having Germanium or Group III-V Active Layer
Google LLC
0 cites
US118958242024
Vertical 1T-1C DRAM Array
Intel Corporation
0 cites
US118815172024
Channel Structures for Thin-film Transistors
Intel Corporation
0 cites
US118627282024
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US118627292024
Vertical Multi-gate Thin Film Transistors
Intel Corporation
0 cites
US118627302024
Top-gate Doped Thin Film Transistor
Intel Corporation
0 cites
US118430542023
Vertical Architecture of Thin Film Transistors
Intel Corporation
0 cites
US118376482023
Stacked Thin Film Transistors with Nanowires
Intel Corporation
0 cites
US118324382023
Capacitor Connections in Dielectric Layers
Intel Corporation
0 cites
US118126002023
Vertical Memory Cell with Self-aligned Thin Film Transistor
Intel Corporation
0 cites
US118125992023
Compute Near Memory with Backend Memory
Intel Corporation
0 cites
US117842512023
Transistors with Ferroelectric Spacer and Methods of Fabrication
Intel Corporation
0 cites
US117770132023
Channel Formation for Three Dimensional Transistors
Intel Corporation
0 cites
US117643062023
Multi-layer Crystalline Back Gated Thin Film Transistor
Intel Corporation
0 cites
US117643032023
Thin Film Transistors Having Double Gates
Intel Corporation
0 cites
US117424292023
Thin-film Transistors with Low Contact Resistance
Intel Corporation
0 cites
US117272602023
Applications of Back-end-of-line (BEOL) Capacitors in Compute-in-memory (CIM) Circuits
Intel Corporation
0 cites
US117217352023
Thin Film Transistors Having U-shaped Features
Intel Corporation
0 cites
US117217372023
Quantum Dot Devices with Trenched Substrates
Intel Corporation
0 cites
US117217662023
Metal-assisted Single Crystal Transistors
Intel Corporation
0 cites
US116996812023
Multi-chip Module Having a Stacked Logic Chip and Memory Stack
Intel Corporation
0 cites
US116997042023
Monolithic Integration of a Thin Film Transistor Over a Complimentary Transistor
INTEL CORPORATION
0 cites
US117007762023
Quantum Dot Devices with Fins
Intel Corporation
0 cites
US116902152023
Self-aligned Bitline and Capacitor via Formation
Intel Corporation
0 cites
US116839292023
Method for Making Memory Cells Based on Thin-film Transistors
Intel Corporation
0 cites
US116770172023
Quantum Well Stacks for Quantum Dot Devices
Intel Corporation
0 cites
US116582222023
Thin Film Transistor with Charge Trap Layer
Intel Corporation
0 cites
US116582082023
Thin Film Transistors for High Voltage Applications
Intel Corporation
0 cites
US116520472023
Intermediate Separation Layers at the Back-end-of-line
Intel Corporation
0 cites
US116371852023
Contact Stacks to Reduce Hydrogen in Semiconductor Devices
Intel Corporation
0 cites
US116265192023
Fabrication of Non-planar IGZO Devices for Improved Electrostatics
Intel Corporation
0 cites
US116108942023
Capacitor Separations in Dielectric Layers
Intel Corporation
0 cites
US115881022023
Semiconductor Material for Resistive Random Access Memory
Intel Corporation
0 cites
US115749102023
Device with Air-gaps to Reduce Coupling Capacitance and Process for Forming Such
Intel Corporation
0 cites
US115692332023
Techniques and Mechanisms for Operation of Stacked Transistors
Intel Corporation
0 cites