5 Patents
- US121193522024IC Structure Including Porous Semiconductor Layer in Bulk Substrate Adjacent Trench Isolation
Globalfoundries U.S. Inc.
0 cites - US120275822024IC Structure Including Porous Semiconductor Layer Under Trench Isolation
GLOBALFOUNDRIES U.S. Inc.
0 cites - US118174792023Transistor with Air Gap Under Raised Source/drain Region in Bulk Semiconductor Substrate
Globalfoundries U.S. Inc.
0 cites - US116770002023IC Structure Including Porous Semiconductor Layer Under Trench Isolations Adjacent Source/drain Regions
Globalfoundries U.S. Inc.
0 cites - US116057102023Transistor with Air Gap Under Source/drain Region in Bulk Semiconductor Substrate
Globalfoundries U.S. Inc.
0 cites