Patents/Inventors

Uygar E. Avci

Portland, ORUS35 patents

31 Patents

US126160212026
Metal Insulator Metal (MIM) Capacitor Architectures
Intel Corpoation
0 cites
US126158072026
Technologies for Transistors with a Ferroelectric Gate Dielectric
0 cites
US126105842026
Selective Growth of High-k Oxide on Channel of Gate-all-around Transistors
Intel Corporation
0 cites
US125882572026
2D Layered Gate Oxide
Intel Corporation
0 cites
US125816962026
Technologies for Transistors with a Ferroelectric Gate Dielectric
0 cites
US125751112026
Back-end-of-line 2D Memory Cell
Intel Corporation
0 cites
US124955592025
Capacitor with Dual Dielectric Layers
Intel Corporation
0 cites
US124712882025
Three-dimensional Nanoribbon-based Hysteretic Memory
Intel Corporation
0 cites
US124379292025
Capacitor with an Electrically Conductive Layer Coupled with a Metal Layer of the Capacitor
Intel Corporation
0 cites
US124329762025
Thin Film Transistors Having Strain-inducing Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites
US124067132025
Probabilistic Computing Devices Based on Stochastic Switching in a Ferroelectric Field-effect Transistor
Intel Corporation
0 cites
US123962542025
Stacked 2D CMOS with Inter Metal Layers
Intel Corporation
0 cites
US123693822025
Integrated Circuit Structures with Graphene Contacts
Intel Corporation
0 cites
US123494422025
Thin Film Transistors Having Semiconductor Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites
US123242042025
Transistors Including Two-dimensional Materials
Intel Corporation
0 cites
US122782892025
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US122667292025
Angled Etch to Enable Tin Removal from Selected Sidewalls
Intel Corporation
0 cites
US122243092025
Capacitors with Built-in Electric Fields
Intel Corporation
0 cites
US121070402024
Metal Insulator Metal (MIM) Capacitor
Intel Corporation
0 cites
US120588492024
Three-dimensional Nanoribbon-based Dynamic Random-access Memory
Intel Corporation
0 cites
US119908992024
Multi-level Spin Logic
Intel Corporation
0 cites
US119800372024
Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
0 cites
US119359562024
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US119089502024
Charge-transfer Spacers for Stacked Nanoribbon 2D Transistors
Intel Corporation
0 cites
US117990292023
Multilayer Insulator Stack for Ferroelectric Transistor and Capacitor
Intel Corporation
0 cites
US117857592023
Floating Body Memory Cell Having Gates Favoring Different Conductivity Type Regions
Intel Corporation
0 cites
US117424072023
Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
0 cites
US117341742023
Low Overhead, High Bandwidth Re-configurable Interconnect Apparatus and Method
Intel Corporation
0 cites
US117356522023
Field Effect Transistors Having Ferroelectric or Antiferroelectric Gate Dielectric Structure
Intel Corporation
0 cites
US116535022023
Fefet with Embedded Conductive Sidewall Spacers and Process for Forming the Same
Intel Corporation
0 cites
US116264752023
Trench Capacitor with Extended Dielectric Layer
Intel Corporation
0 cites