Patents/Inventors

Uygar Avci

Portland, ORUS40 patents

31 Patents

US126044812026
Ic's with Multple Levels of Embedded Memory
Intel Corporation
0 cites
US125324802026
Embedded Memory with Double-walled Ferroelectric Capacitors
Intel Corporation
0 cites
US123962172025
Encapsulation for Transition Metal Dichalcogenide Nanosheet Transistor and Methods of Fabrication
Intel Corporation
0 cites
US123494382025
Contact Gating for 2D Field Effect Transistors
Intel Corporation
0 cites
US123275812025
Embedded Memory Ic's with Power Supply Droop Circuitry Coupled to Ferroelectric Capacitors
Intel Corporation
0 cites
US123101012025
Gate Dielectrics for Complementary Metal Oxide Semiconductors Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122667122025
Transition Metal Dichalcogenide Nanosheet Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122667202025
Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
0 cites
US121763882024
Transition Metal Dichalcogenide Nanowires and Methods of Fabrication
Intel Corporation
0 cites
US121661222024
Field-effect Transistor (FET) with Self-aligned Ferroelectric Capacitor and Methods of Fabrication
Intel Corporation
0 cites
US121258932024
Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites
US121258952024
Transition Metal Dichalcogenide (TMD) Layer Stack for Transistor Applications and Methods of Fabrication
Intel Corporation
0 cites
US121131172024
Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
0 cites
US121007312024
Crystalline Bottom Electrode for Perovskite Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US120481652024
Ferroelectric Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US120403782024
Ferroelectric or Anti-ferroelectric Trench Capacitor with Spacers for Sidewall Strain Engineering
Intel Corporation
0 cites
US119014002024
MFM Capacitor and Process for Forming Such
Intel Corporation
0 cites
US118627152024
Vertical Tunneling Field-effect Transistors
Intel Corporation
0 cites
US117697892023
MFM Capacitor with Multilayered Oxides and Metals and Processes for Forming Such
Intel Corporation
0 cites
US117272602023
Applications of Back-end-of-line (BEOL) Capacitors in Compute-in-memory (CIM) Circuits
Intel Corporation
0 cites
US117231882023
Replacement Metal COB Integration Process for Embedded DRAM
Intel Corporation
0 cites
US116950512023
Gate Stacks for Finfet Transistors
Intel Corporation
0 cites
US116463562023
Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites
US116463742023
Ferroelectric Transistors to Store Multiple States of Resistances for Memory Cells
Intel Corporation
0 cites
US116409842023
Transistor Device with (anti)ferroelectric Spacer Structures
Intel Corporation
0 cites
US116371912023
Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
0 cites
US116161302023
Transistor Device with Variously Conformal Gate Dielectric Layers
Intel Corporation
0 cites
US116056242023
Ferroelectric Resonator
Intel Corporation
0 cites
US115946242023
Transistor Structures Formed with 2DEG at Complex Oxide Interfaces
Intel Corporation
0 cites
US115814172023
Improper Ferroelectric Active and Passive Devices
Intel Corporation
0 cites
US115521802023
Antiferroelectric Perovskite Gate Oxide for Transistor Applications
Intel Corporation
0 cites