18 Patents
- US125884252026Systems, Articles, and Methods Related to Multilayered Magnetic Memory Devices
Max-planck-gesellschaft Zur Förderung Der Wissenschaften E.v.
0 cites - US125486122026Semiconductor Memory Device with Spin-orbit Coupling Channel
National University Of Singapore
0 cites - 0 cites
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- US123155422025Memristor Element with a Magnetic Domain Wall in a Magnetic Free Layer Moved by Spin Orbit Torque, Synapse Element and Neuromorphic Processor Including the Same
Samsung Electronics Co., Ltd
0 cites - 0 cites
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- US121190362024Magnetic Memory Devices and Methods of Controlling Domain Sizes Thereof
Max-planck-gesellschaft Zur Förderung Der Wissenschaften E.v.
0 cites - 0 cites
- US120147622024Semiconductor Memory Device with Spin-orbit Coupling Channel
National University Of Singapore
0 cites - US120109252024Magnetic Memory Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US119355732024Magnetic Memory Devices Having Multiple Magnetic Layers Therein
Samsung Electronics Co., Ltd.
0 cites - US118056592023Magnetic Memory Devices Having a First Magnetic Pattern and Multiple Second Magnetic Patterns Thereon
Samsung Electronics Co., Ltd.
0 cites - US117279732023Magnetic Property Measuring Systems, Methods for Measuring Magnetic Properties, and Methods for Manufacturing Magnetic Memory Devices Using the Same
Samsung Electronics Co., Ltd.
0 cites - US117069982023Magnetic Tunnel Junction and Magnetic Memory Device Comprising the Same
Samsung Electronics Co., Ltd.
0 cites - US116109402023Magnetic Memory Devices Having a First Magnetic Pattern and Multiple Second Magnetic Patterns Thereon
Samsung Electronics Co., Ltd.
0 cites - US115881002023Magnetic Memory Devices Including Magnetic Tunnel Junctions
Samsung Electronics Co., Ltd.
0 cites - US115456162023Magnetic Memory Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites