Patents/Inventors

Tzu-ching Lin

HsinchuTW6 patents

7 Patents

US124697442025
Method for Forming Finfet with Source/drain Regions Comprising an Insulator Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124023442025
FETS and Methods of Forming FETS
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122437842025
Silicon Phosphide Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119619122024
Merged Source/drain Features
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118239492023
Finfet with Source/drain Regions Comprising an Insulator Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117495672023
Silicon Phosphide Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites
US116007152023
Fets and Methods of Forming Fets
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. Ltd.
0 cites