Tuoh Bin Ng

4 Patents

• US124697442025

  Method for Forming Finfet with Source/drain Regions Comprising an Insulator Layer

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122437842025

  Silicon Phosphide Semiconductor Device

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US118239492023

  Finfet with Source/drain Regions Comprising an Insulator Layer

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US117495672023

  Silicon Phosphide Semiconductor Device

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd

  0 cites