8 Patents
- US124462942025Method of Manufacturing Semiconductor Devices Having Different Gate Dielectric Thickness Within One Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120517522024Embedded Source or Drain Region of Transistor with Downward Tapered Region Under Facet Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US117217622023Fin Field Effect Transistor (finfet) Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117055192023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116317482023Structure and Formation Method of Semiconductor Device Structure with Gate Stack
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115945342023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115946352023Embedded Source or Drain Region of Transistor with Downward Tapered Region Under Facet Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US115455722023Embedded Source or Drain Region of Transistor with Downward Tapered Region Under Facet Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites