15 Patents
- US125325182026Transistor Source/drain Regions and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124396572025Confined Source/drain Epitaxy Regions and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124263582025Semiconductor Device Having Epitaxy Source/drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124083622025Method of Forming Devices with Strained Source/drain Structures
AIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123639452025Method of Forming Source/drain Regions with Quadrilateral Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639932025Semiconductor Device Having Merged Epitaxial Features with Arc-like Bottom Surface and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120574502024Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120094272024Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119489712024Confined Source/drain Epitaxy Regions and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119160712024Semiconductor Device Having Epitaxy Source/drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119087422024Semiconductor Device Having Merged Epitaxial Features with Arc-like Bottom Surface and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117497522023Doping Profile for Strained Source/drain Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116521052023Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115749162023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites