32 Patents
- US126220532026Hybrid CMOS with Fin and Nanosheet Architectures
International Business Machines Corporation
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- US125882662026CMOS Integration for Doped Placeholder as Direct Backside Contact
International Business Machines Corporation
0 cites - US125686502026Profile Engineering for Deep Trenches in a Semiconductor Device
International Business Machines Corporation
0 cites - 0 cites
- US125506202026Top Electrode to Metal Line Connection for Magneto-resistive Random-access Memory Stack Height Reduction
International Business Machines Corporation
0 cites - 0 cites
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- US125060492025Transistors with Backside Source/drain Contact and Spacer
International Business Machines Corporation
0 cites - US124827502025Power Distribution Network with Backside Power Rail
International Business Machines Corporation
0 cites - US124842972025Forksheet Transistor with Dual Depth Late Cell Boundary Cut
International Business Machines Corporation
0 cites - US124577802025Semiconductor Device with Void Under Source/drain Region for Backside Contact
International Business Machines Corporation
0 cites - US124531462025Epi Growth Uniformity with Source/drain Placeholder
International Business Machines Corporation
0 cites - US124514122025Backside Gate via Structure Using Self-aligned Scheme
International Business Machines Corporation
0 cites - US124463062025Stacked Field Effect Transistor Structure with Independent Gate Control Between Top and Bottom Gates
International Business Machines Corporation
0 cites - US123962122025Gate All-around Device with Through-stack Nanosheet 2D Channel
International Business Machines Corporation
0 cites - US123242372025Diffusion-break Region in Stacked-fet Integrated Circuit Device
International Business Machines Corporation
0 cites - US123101022025Stacked Vertical Transport Field-effect Transistor Logic Gate Structures with Shared Epitaxial Layers
International Business Machines Corporation
0 cites - US122666052025Top via Interconnects with Line Wiggling Prevention
International Business Machines Corporation
0 cites - US122625522025Source/drain Epitaxy Process in Stacked FET
International Business Machines Corporation
0 cites - US120806402024Self-aligned via to Metal Line for Interconnect
International Business Machines Corporation
0 cites - US120756272024AI Accelerator with MRAM, PCM, and Recessed PCM Bottom Electrode
International Business Machines Corporation
0 cites - US119569392024Static Random Access Memory Using Vertical Transport Field Effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US118496472023Nonmetallic Liner Around a Magnetic Tunnel Junction
International Business Machines Corporation
0 cites - US118109182023Stacked Vertical Transport Field-effect Transistor Logic Gate Structures with Shared Epitaxial Layers
International Business Machines Corporation
0 cites - US117569612023Staggered Stacked Vertical Crystalline Semiconducting Channels
International Business Machines Corporation
0 cites - US116784752023Static Random Access Memory Using Vertical Transport Field Effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116521562023Nanosheet Transistor with Asymmetric Gate Stack
International Business Machines Corporation
0 cites - US116056732023Dual Resistive Random-access Memory with Two Transistors
International Business Machines Corporation
0 cites - US115629082023Dielectric Structure to Prevent Hard Mask Erosion
International Business Machines Corporation
0 cites - US115576752023Reduction of Bottom Epitaxy Parasitics for Vertical Transport Field Effect Transistors
International Business Machines Corporation
0 cites