Tsung-hsi Yang

8 Patents

• US124396572025

  Confined Source/drain Epitaxy Regions and Method Forming Same

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US123896492025

  Transistors with Stacked Semiconductor Layers as Channels

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US123165522025

  Data Bandwidth Management Method and Device

  MEDIATEK Inc.

  0 cites
• US120574502024

  Epitaxy Regions with Large Landing Areas for Contact Plugs

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US119489712024

  Confined Source/drain Epitaxy Regions and Method Forming Same

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US116521052023

  Epitaxy Regions with Large Landing Areas for Contact Plugs

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US115814252023

  Method for Manufacturing Semiconductor Structure with Enlarged Volumes of Source-drain Regions

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US115690842023

  Method for Manufacturing Semiconductor Structure with Reduced Nodule Defects

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites