Tsung-han Shen

3 Patents

• US124313562025

  Metal Gate Structure and Method of Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US121007512024

  Void Elimination for Gap-filling in High-aspect Ratio Trenches

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US116109822023

  Void Elimination for Gap-filling in High-aspect Ratio Trenches

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites