8 Patents
- US125433522026Integrated Circuit with Bottom Dielectric Insulators and Fin Sidewall Spacers for Reducing Source/drain Leakage Currents
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125324922026Structure and Formation Method of Semiconductor Device with Epitaxial Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124842462025Method of Manufacturing a Semiconductor Device Including Forming a Sidewall Spacer on a Sidewall of a Channel Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123425872025Integrated Circuit with Nanostructure Transistors and Bottom Dielectric Insulators
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362262025Semiconductor Device Structure Including Stacked Nanostructures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123175402025Method for Manufacturing Semiconductor Structure with Isolation Feature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122059982025Semiconductor Device with Wrap Around Silicide and Hybrid Fin
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120517362024Field Effect Transistor with Inner Spacer Liner Layer and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites