11 Patents
- US125987842026Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125686622026Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US125385712026Transistor Gate Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125016892025Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123621852025Method Forming Gate Stacks Adopting Thin Silicon Cap
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362732025Method for Forming Semiconductor Structure Using Fluorine to Treat Gate Stack
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120742062024Integrated Circuit Device with Improved Reliability
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120515942024Method for Forming Semiconductor Device Structure with Gate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120403652024Incorporating Nitrogen in Dipole Engineering for Multi-threshold Voltage Applications in Stacked Device Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120150662024Triple Layer High-k Gate Dielectric Stack for Workfunction Engineering
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117912162023Nanostructure Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites