12 Patents
- US123362142025Inner Spacers for Gate-all-around Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123175842025Method of Forming High Voltage Transistor and Structure Resulting Therefrom
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US123083122025Interconnect Structure and Method for Manufacturing the Interconnect Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121548222024Dummy Fin Structures and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120949522024Air Spacer Formation with a Spin-on Dielectric Material
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119905452024Semiconductor Device Having Fully Oxidized Gate Oxide Layer and Method for Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119232512024Methods of Cutting Metal Gates and Structures Formed Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118552142023Inner Spacers for Gate-all-around Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING Co. Ltd.
0 cites - US116642682023Dummy Fin Structures and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116370622023Interconnect Structure and Method for Manufacturing the Interconnect Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US116264822023Air Spacer Formation with a Spin-on Dielectric Material
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115454002023Methods of Cutting Metal Gates and Structures Formed Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites