Patents/Inventors

Tse-wei Lu

HsinchuTW1 patent

2 Patents

US123984872025
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
Globalwafers Co., Ltd
0 cites
US117537412023
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
Globalwafers Co., Ltd.
0 cites