16 Patents
- US125640282026Dielectric Layers Having Nitrogen-containing Crusted Surfaces
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - 0 cites
- US124179482025Hybrid Film Scheme for Self-aligned Contact
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123680982025Methods of Forming Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123025952025Dummy Hybrid Film for Self-alignment Contact Formation
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122939472025Gap Patterning for Metal-to-source/drain Plugs in a Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122552402025Topology Selective and Sacrificial Silicon Nitride Layer for Generating Spacers for a Semiconductor Device Drain
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121549732024Fin Field-effect Transistor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121071632024Semiconductor Device Structure Having Dislocation Stress Memorization and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120949522024Air Spacer Formation with a Spin-on Dielectric Material
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120878382024Self-aligned Contact Hard Mask Structure of Semiconductor Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119730272024Semiconductor Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118429302023Gap Patterning for Metal-to-source/drain Plugs in a Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117423992023Topology Selective and Sacrificial Silicon Nitride Layer for Generating Spacers for a Semiconductor Device Drain
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US116264822023Air Spacer Formation with a Spin-on Dielectric Material
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites