11 Patents
- US125989272026Methods of Forming Semiconductor Devices Including Self-aligned P-type and N-type Doped Regions
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US125687162026Wafer-scale Separation and Transfer of Gan Material
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US125123702025Neural Network Based Prediction of Semiconductor Device Response
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US124761112025Selective Area Diffusion Doping of III-N Materials
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US124396532025Multi-layer Hybrid Edge Termination for III-N Power Devices
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US123763882025Low Resistance Photoconductive Semiconductor Switch (PCSS)
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - 0 cites
- US120209852024Transferring Large-area Group Iii-nitride Semiconductor Material and Devices to Arbitrary Substrates
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US119968402024Light Controlled Switch Module
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US118173182023Gan Devices with Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the Same
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US116348342023Diamond on Nanopatterned Substrate
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites