Patents/Inventors

Toshiyasu Fujimoto

HigashihiroshimaJP3 patents

4 Patents

US121563982024
Semiconductor Device Having Word Line Embedded in Gate Trench
Micron Technology, Inc.
0 cites
US119858122024
Semiconductor Memory Device Including a Trench Gate Structure and Method of Forming the Same
Micron Technology, Inc.
0 cites
US118126062023
Semiconductor Device Having Gate Trench
MICRON TECHNOLOGY, Inc.
0 cites
US115879332023
Semiconductor Memory Device and Method of Forming the Same
Micron Technology, Inc.
0 cites