Tomohisa Kato

2 Patents

• US116555612023

  N-type 4h—sic Single Crystal Substrate and Method of Producing N-type 4h—sic Single Crystal Substrate

  SHOWA DENKO K.K.

  0 cites
• US115426312023

  Method for Producing P-type 4h-sic Single Crystal

  DENSO CORPORATION

  0 cites