4 Patents
- US125325012026Structure with Back-gate Having Oppositely Doped Semiconductor Regions
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US118376052023Structure Including Transistor Using Buried Insulator Layer as Gate Dielectric and Trench Isolations in Source and Drain
Globalfoundries U.S. Inc.
0 cites - US116109992023Floating-gate Devices in High Voltage Applications
GLOBALFOUNDRIES DRESDEN MODULE ONE LIMITED LIABILITY COMPANY & Co. KG
0 cites