Tobias Hoechbauer

3 Patents

• US122495042025

  Manufacturing and Reuse of Semiconductor Substrates

  Infineon Technologies AG

  0 cites
• US118878942024

  Methods for Processing a Wide Band Gap Semiconductor Wafer Using a Support Layer and Methods for Forming a Plurality of Thin Wide Band Gap Semiconductor Wafers Using Support Layers

  Infineon Technologies AG

  0 cites
• US117215472023

  Method for Manufacturing a Silicon Carbide Substrate for an Electrical Silicon Carbide Device, a Silicon Carbide Substrate and an Electrical Silicon Carbide Device

  Infineon Technologies AG

  0 cites