Thomas J. Smith, Jr.

2 Patents

• US124023462025

  Circuits and Group Iii-nitride Transistors with Buried P-layers and Controlled Gate Voltages and Methods Thereof

  Wolfspeed, Inc.

  0 cites
• US119294282024

  Circuits and Group Iii-nitride High-electron Mobility Transistors with Buried P-type Layers Improving Overload Recovery and Process for Implementing the Same

  Wolfspeed, Inc.

  0 cites