Patents/Inventors

Tetsuo Endoh

SendaiJP33 patents

31 Patents

US126085992026
Driving Method of Synapse Circuit
Tohoku University
0 cites
US125989202026
Magnetoresistive Element and Magnetic Memory Device
TOHOKU UNIVERSITY
0 cites
US125543112026
Semiconductor Circuit Device
Tohoku University
0 cites
US124698252025
Power Semiconductor Device and Power Semiconductor Module Each Having Electrodes on Opposing Surfaces of Power Semiconductor Chip
TOHOKU UNIVERSITY
0 cites
US124556102025
Computation Processing Device
Tohoku University
0 cites
US124242732025
Storage Circuit Provided with Variable Resistance Type Elements
TOHOKU UNIVERSITY
0 cites
US124025372025
Magnetoresistance Effect Element, Magnetic Memory, and Film Formation Method for Said Magnetoresistance Effect Element
TOHOKU UNIVERSITY
0 cites
US124023262025
Magnetic Film, Magnetoresistance Effect Element and Magnetic Memory
TOHOKU UNIVERSITY
0 cites
US123718132025
Silicon Wafer and Method for Producing Silicon Wafer
TOHOKU UNIVERSITY
0 cites
US123259082025
Platinum-based Sputtering Target, and Method for Producing the Same
TANAKA KIKIZOKU KOGYO K.K.
0 cites
US122369882025
Magnetic Laminated Film, Magnetic Memory Element, Magnetic Memory, and Artificial Intelligence System
TOHOKU UNIVERSITY
0 cites
US121484682024
Semiconductor Memory Device and Control Device for Semiconductor Memory Device
POWER SPIN Inc.
0 cites
US121317642024
Device, Sensor Node, Access Controller, Data Transfer Method, and Processing Method in Microcontroller
TOHOKU UNIVERSITY
0 cites
US119909012024
Semiconductor Circuit and Support Device for Logic Circuit Design
TOHOKU UNIVERSITY
0 cites
US119634582024
Magnetic Tunnel Junction Device, Method for Manufacturing Magnetic Tunnel Junction Device, and Magnetic Memory
TOHOKU UNIVERSITY
0 cites
US119144482024
Clustering Device and Clustering Method
TOHOKU UNIVERSITY
0 cites
US118878452024
Method for Producing Three-dimensional Structure, Method for Producing Vertical Transistor, Vertical Transistor Wafer, and Vertical Transistor Substrate
TOHOKU UNIVERSITY
0 cites
US118622172024
Device, Sensor Node, Access Controller, Data Transfer Method, and Processing Method in Microcontroller
TOHOKU UNIVERSITY
0 cites
US118298632023
Neural Network Circuit Device
TOHOKU UNIVERSITY
0 cites
US117909662023
Nonvolatile Logic Circuit
TOHOKU UNIVERSITY
0 cites
US117709812023
Magnetoresistive Element and Magnetic Memory
TOHOKU UNIVERSITY
0 cites
US117659812023
Magnetoresistance Effect Element and Magnetic Memory
TOHOKU UNIVERSITY
0 cites
US117051762023
Storage Circuit Provided with Variable Resistance Type Elements, and Its Test Device
TOHOKU UNIVERSITY
0 cites
US116902992023
Magnetoresistance Effect Element and Magnetic Memory
Tohoku University
0 cites
US116318042023
Magnetoresistive Effect Element and Magnetic Memory
TOHOKU UNIVERSITY
0 cites
US116100832023
Method for Calculating Clustering Evaluation Value, and Method for Determining Number of Clusters
TOHOKU UNIVERSITY
0 cites
US116106142023
Magnetoresistive Element, Magnetic Memory Device, and Writing and Reading Method for Magnetic Memory Device
TOHOKU UNIVERSITY
0 cites
US116106152023
Lookup Table Circuit Comprising a Programmable Logic Device Having a Selection Circuit Connected to a Memory Cell Array and Separated from a Path of a Read Circuit
TOHOKU UNIVERSITY
0 cites
US116003132023
Memory Circuit Device Including a Selection Circuit Unit Shared by a Write Circuit Unit and a Read Circuit Unit
TOHOKU UNIVERSITY
0 cites
US115631692023
Magnetic Tunnel Junction Element and Magnetic Memory
TOHOKU UNIVERSITY
0 cites
US115577192023
Magnetoresistance Effect Element, Circuit Device, and Circuit Unit
TOHOKU UNIVERSITY
0 cites