Patents/Inventors

Tenko Yamashita

Schenectady, NYUS35 patents

29 Patents

US126158412026
Forksheet Transistor with Advanced Cell Height Scaling
International Business Machines Corporation
0 cites
US125751132026
High Density Memory with Stacked Nanosheet Transistors
International Business Machines Corporation
0 cites
US125573592026
Self-aligned Backside Contact with Protruding Source/drain
International Business Machines Corporation
0 cites
US125507122026
Bulk Substrate Backside Power Rail
0 cites
US125139802025
Stacked Vertical Transport Field Effect Transistor with Anchors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124890352025
Semiconductor Passive Device Integration for Silicon-on-insulator Substrate
International Business Machines Corporation
0 cites
US124329112025
Read-only Memory for Chip Security That Is MOSFET Process Compatible
International Business Machines Corporation
0 cites
US123640042025
Dummy Fin Contact in Vertically Stacked Transistors
International Business Machines Corporation
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US123494452025
Vertically Integrated Semiconductor Device
International Business Machines Corporation
0 cites
US123100092025
Read-only Memory with Vertical Transistors
International Business Machines Corporation
0 cites
US122242032025
Air Gap Spacer Formation for Nano-scale Semiconductor Devices
Adeia Semiconductor Solutions LLC
0 cites
US121425992024
Stacked Transistor Structure with Reflection Layer
International Business Machines Corporation
0 cites
US121193932024
Punch Through Stopper in Bulk Finfet Device
Adeia Semiconductor Solutions LLC
0 cites
US120330612024
Capacitor-based Synapse Network Structure with Metal Shielding Between Outputs
International Business Machines Corporation
0 cites
US120150692024
Gate-all-around Field Effect Transistor Having Multiple Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118943032024
Circuit Wiring Techniques for Stacked Transistor Structures
International Business Machines Corporation
0 cites
US118473982023
Automatic Generation of Ground Rule Verification Macros
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117697962023
Hybrid Complementary Metal-oxide Semiconductor Field Effect Transistor Nanosheet Device
International Business Machines Corporation
0 cites
US117642592023
Vertical Field-effect Transistor with Dielectric Fin Extension
International Business Machines Corporation
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US117570122023
Source and Drain Contact Cut Last Process to Enable Wrap-around-contact
International Business Machines Corporation
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US117569572023
Reducing Gate Resistance in Stacked Vertical Transport Field Effect Transistors
International Business Machines Corporation
0 cites
US117440652023
Read-only Memory for Chip Security That Is MOSFET Process Compatible
International Business Machines Corporation
0 cites
US116580622023
Air Gap Spacer Formation for Nano-scale Semiconductor Devices
TESSERA LLC
0 cites
US116520062023
Finfet Complementary Metal-oxide-semiconductor (CMOS) Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115750032023
Creation of Stress in the Channel of a Nanosheet Transistor
Commissariat A L'energie Atomique Et Aux Energies Alternatives
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US115692292023
Stacked Vertical Transport Field Effect Transistors with Anchors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115629062023
Low Resistance Source Drain Contact Formation with Trench Metastable Alloys and Laser Annealing
GLOBALFOUNDRIES Inc.
0 cites
US115630032023
Fin Top Hard Mask Formation After Wafer Flipping Process
International Business Machines Corporation
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US115454992023
Read-only Memory with Vertical Transistors
International Business Machines Corporation
0 cites